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Two-dimensional (2D) materials such as semiconductors and ferroelectrics are promising for future energy-efficient logic devices because of their extraordinary electronic properties at atomic thickness. In this work, we investigated a van der Waals heterostructure composited of 2D semiconducting MoS₂and 2D ferroelectric CuInP₂S₆(CIPS) and NiPS₃. Instead of using 2D ferroelectrics as conventional gate dielectric layers, here we applied CIPS and NiPS₃as a ferroelectric capping layer, and investigated a long-distance coupling effect with the gate upon the sandwiched 2D MoS₂channels. Our experimental results showed an outstanding enhancement of the electrodynamic gating in 2D MoS₂transistors, represented by a significant reduction of subthreshold swing at room temperature. This was due to the coupling-induced polarization of 2D ferroelectrics at 2D semiconductor surface which led to an effective and dynamic magnification of the gate capacitance. Meanwhile, the electrostatic gating was remained steady after adding the ferroelectric capping layer, providing ease and compatibility for further implementation with existing circuit and system design. Our work demonstrates the long-distance coupling effect of 2D ferroelectrics in a capping architecture, reveals its impacts from both electrodynamic and electrostatic perspectives, and expands the potential of 2D ferroelectrics to further improve the performance of energy-efficient nanoelectronics.

 

High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal–semiconductor interfaces in WS 2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a “generalized” Cu doping by using randomly distributed Cu atoms along the channel and (ii) a “localized” Cu doping by adapting an ultrathin Cu layer at the metal–semiconductor interface. Compared to the pristine WS 2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1–3 orders of magnitude, and consequently elevate electron mobilities by 5–7 times. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs. 

2D semiconductors such as monolayer molybdenum disulfide (MoS₂) are promising material candidates for next‐generation nanoelectronics. However, there are fundamental challenges related to their metal–semiconductor (MS) contacts, which limit the performance potential for practical device applications. In this work, 2D monolayer hexagonal boron nitride (h‐BN) is exploited as an ultrathin decorating layer to form a metal–insulator–semiconductor (MIS) contact, and an innovative device architecture is designed as a platform to reveal a novel diode‐like selective enhancement of the carrier transport through the MIS contact. The contact resistance is significantly reduced when the electrons are transported from the semiconductor to the metal, but is barely affected when the electrons are transported oppositely. A concept of carrier collection barrier is proposed to interpret this intriguing phenomenon as well as a negative Schottky barrier height obtained from temperature‐dependent measurements, and the critical role of the collection barrier at the drain end is shown for the overall transistor performance.